作者：
Hongwei,Xu [1]
;
Jingwei,Liu [1]
;
Sheng,Wei [1]
;
Jie,Luo [1]
;
Rui,Gong [1]
;
Siyuan,Tian [2]
;
Yiqi,Yang [2]
;
Yukun,Lei [2]
;
Xinman,Chen [2]
;
Jiahong,Wang [3]
;
Gaokuo,Zhong [4]
;
Yongbing,Tang [3]
;
Feng,Wang [1]
;
Hui-Ming,Cheng [5]
;
Baofu,Ding [6]
作者单位：
Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China.
[1]
School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, China.
[2]
Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China.
[3]
Hubei Three Gorges Laboratory, Yichang, Hubei, 443007, China.
[4]
Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China. f.wang@siat.ac.cn.
[5]
Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China. hm.cheng@siat.ac.cn.
[6]
Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, China. bf.ding@siat.ac.cn.
[7]
Shenzhen Geim Graphene Center (SGC), Tsinghua-Berkeley Shenzhen Institute (TBSI) & Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, Guangdong, 518055, China. bf.ding@siat.ac.cn.
[8]
DOI
10.1038/s41377-023-01327-8
PMID
37989728
发布时间
2023-11-24
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