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Improved Resistive Switching Characteristics and Synaptic Functions of InZnO/SiO<sub>2</sub> Bilayer Device.

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第一作者： Dongyeol,Ju

第一单位： Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.

作者： Dongyeol,Ju ^[1] ; Minsuk,Koo ^[2] ; Sungjun,Kim ^[1]

作者单位： Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea. ^[1] Department of Computer Science and Engineering, Incheon National University, Incheon 22012, Republic of Korea. ^[2]

关键词 InZnO neuromorphic computing resistive switching spiking neural network synaptic plasticity

DOI 10.3390/ma16237324

PMID 38068068

发布时间 2023-12-09

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Materials (Basel, Switzerland)

2023年16卷23期

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Improved Resistive Switching Characteristics and Synaptic Functions of InZnO/SiO<sub>2</sub> Bilayer Device.

Materials (Basel, Switzerland)

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Materials (Basel, Switzerland)

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Improved Resistive Switching Characteristics and Synaptic Functions of InZnO/SiO<sub>2</sub> Bilayer Device.

Materials (Basel, Switzerland)

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Materials (Basel, Switzerland)

相关期刊

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