Reliable synaptic plasticity of InGaZnO transistor with TiO<sub>2</sub>interlayer.

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作者： Soo-Hong,Jeong ^[1] ; Seyoung,Oh ^[2] ; Ojun,Kwon ^[1] ; Do Hyeong,Kim ^[2] ; Hyun Young,Seo ^[1] ; Woojin,Park ^[2] ; Byungjin,Cho ^[1]

作者单位： Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea. ^[1] Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea. ^[2]

关键词 MNIST pattern-recognition accuracy TiO2 interlayer indium gallium zinc oxide (IGZO)synaptic plasticity synaptic transistors

DOI 10.1088/1361-6528/ad1540

PMID 38091622

发布时间 2023-12-29

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