Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals.

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第一作者： V B,Shmagin

第一单位： Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia.

作者： V B,Shmagin ^[1] ; A N,Yablonskiy ^[1] ; M V,Stepikhova ^[1] ; D V,Yurasov ^[1] ; A N,Mikhaylov ^[2] ; D I,Tetelbaum ^[2] ; E E,Rodyakina ^[3] ; E E,Morozova ^[1] ; D V,Shengurov ^[1] ; S A,Kraev ^[1] ; P A,Yunin ^[1] ; A I,Belov ^[2] ; A V,Novikov ^[4]

作者单位： Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia. ^[1] Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia. ^[2] Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia.;Physical Department, Novosibirsk State University, 630090 Novosibirsk, Russia. ^[3] Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia.;Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia. ^[4]

关键词 SiGe quantum dots electroluminescence light emitting diodes photonic crystals silicon photonics ‘bound state in continuum’ modes

DOI 10.1088/1361-6528/ad1f8a

PMID 38232400

发布时间 2024-02-02

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