Current-Controllable and Reversible Multi-Resistance-State Based on Domain Wall Number Transition in 2D Ferromagnet Fe<sub>3</sub>GeTe<sub>2</sub>.

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第一作者： Chendi,Yang

第一单位： Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan University, Shanghai, 200438, China.

作者： Chendi,Yang ^[1] ; Yalei,Huang ^[2] ; Ke,Pei ^[1] ; Xiumin,Long ^[2] ; Liting,Yang ^[1] ; Yongming,Luo ^[3] ; Yuxiang,Lai ^[4] ; Jincang,Zhang ^[5] ; Guixin,Cao ^[2] ; Renchao,Che ^[5]

作者单位： Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan University, Shanghai, 200438, China. ^[1] Materials Genome Institute, Shanghai University, Shanghai, 200444, China. ^[2] School of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou, 310018, China. ^[3] Pico Electron Microscopy Center, Innovation Institute for Ocean Materials Characterization, Center for Advanced Studies in Precision Instruments, Hainan University, Haikou, 570228, China. ^[4] Zhejiang Laboratory, Hangzhou, 311100, China. ^[5]

关键词 2D ferromagnet Fe3GeTe2 domain wall motion in‐situ experiment resistance spintronic nanodevices

DOI 10.1002/adma.202311831

PMID 38253422

发布时间 2024-05-02

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