355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors.

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作者： Sang Yeon,Park ^[1] ; Younggon,Choi ^[1] ; Yong Hyeok,Seo ^[1] ; Hojun,Kim ^[2] ; Dong Hyun,Lee ^[1] ; Phuoc Loc,Truong ^[2] ; Yongmin,Jeon ^[3] ; Hocheon,Yoo ^[1] ; Sang Jik,Kwon ^[1] ; Daeho,Lee ^[2] ; Eou-Sik,Cho ^[1]

作者单位： Department of Electronics Engineering, Gachon University, Seongnam City 13120, Republic of Korea. ^[1] Department of Mechanical Engineering, Gachon University, Seongnam City 13120, Republic of Korea. ^[2] Department of Biomedical Engineering, Gachon University, Seongnam City 13120, Republic of Korea. ^[3]

关键词 ITO/IGZO energy band structure UV pulsed laser annealing a-IGZO TFT selective annealing

DOI 10.3390/mi15010103

PMID 38258222

发布时间 2024-10-23

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355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors.

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355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors.

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