Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials.

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作者： Simon,Wintersteller ^[1] ; Olesya,Yarema ^[2] ; Dhananjeya,Kumaar ^[1] ; Florian M,Schenk ^[1] ; Olga V,Safonova ^[3] ; Paula M,Abdala ^[4] ; Vanessa,Wood ^[2] ; Maksym,Yarema ^[5]

作者单位： Chemistry and Materials Design, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zürich, 8092, Zürich, Switzerland. ^[1] Materials and Device Engineering, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zürich, 8092, Zürich, Switzerland. ^[2] Paul Scherrer Institute, 5232, Villigen, Switzerland. ^[3] Laboratory of Energy Science and Engineering, Department of Mechanical and Process Engineering, ETH Zurich, 8092, Zürich, Switzerland. ^[4] Chemistry and Materials Design, Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zürich, 8092, Zürich, Switzerland. yaremam@ethz.ch. ^[5]

DOI 10.1038/s41467-024-45327-7

PMID 38307863

发布时间 2024-02-06

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Nature communications

2024年15卷1期

1011页

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Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials.

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Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials.

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