Selected Area Manipulation of MoS<sub>2</sub> via Focused Electron Beam-Induced Etching for Nanoscale Device Editing.

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作者： John,Lasseter ^[1] ; Spencer,Gellerup ^[1] ; Sujoy,Ghosh ^[2] ; Seok Joon,Yun ^[2] ; Rama,Vasudevan ^[2] ; Raymond R,Unocic ^[2] ; Olugbenga,Olunloyo ^[3] ; Scott T,Retterer ^[2] ; Kai,Xiao ^[2] ; Steven J,Randolph ^[2] ; Philip D,Rack ^[1]

作者单位： Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States. ^[1] Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States. ^[2] Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States. ^[3]

关键词 direct write electron beam-induced etching nanofabrication patterning two-dimensional materials

DOI 10.1021/acsami.3c17182

PMID 38346142

发布时间 2024-02-22

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