Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy.

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第一作者： Linsheng,Liu

第一单位： Guangxi Key Laboratory of Brain-Inspired Computing and Intelligent Chips/Key Laboratory of Integrated Circuits and Microsystems (Education Department of Guangxi Zhuang Autonomous Region), School of Electronic and Information Engineering/School of Integrated Circuits, Guangxi Normal University, Guilin 541004, China.

作者： Linsheng,Liu ^[1] ; Ruolin,Chen ^[1] ; Chongtao,Kong ^[2] ; Zhen,Deng ^[3] ; Guipeng,Liu ^[4] ; Jianfeng,Yan ^[5] ; Le,Qin ^[3] ; Hao,Du ^[1] ; Shuxiang,Song ^[1] ; Xinhui,Zhang ^[2] ; Wenxin,Wang ^[3]

作者单位： Guangxi Key Laboratory of Brain-Inspired Computing and Intelligent Chips/Key Laboratory of Integrated Circuits and Microsystems (Education Department of Guangxi Zhuang Autonomous Region), School of Electronic and Information Engineering/School of Integrated Circuits, Guangxi Normal University, Guilin 541004, China. ^[1] State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. ^[2] Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. ^[3] School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China. ^[4] Sino Nitride Semiconductor Co., Ltd., Dongguan 523000, China. ^[5]

关键词 InGaAs quantum wells low-temperature growth migration-enhanced epitaxy

DOI 10.3390/ma17040845

PMID 38399096

发布时间 2024-02-27

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