Drift of Schottky Barrier Height in Phase Change Materials.

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第一作者： Rivka-Galya,Nir-Harwood

第一单位： Viterbi Faculty of Electrical & Computer Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel.

作者： Rivka-Galya,Nir-Harwood ^[1] ; Guy,Cohen ^[2] ; Amlan,Majumdar ^[2] ; Richard,Haight ^[2] ; Emanuel,Ber ^[1] ; Lynne,Gignac ^[2] ; Efrat,Ordan ^[1] ; Lishai,Shoham ^[1] ; Yair,Keller ^[1] ; Lior,Kornblum ^[1] ; Eilam,Yalon ^[1]

作者单位： Viterbi Faculty of Electrical & Computer Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel. ^[1] IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, United States. ^[2]

关键词 Schottky barrier height contact resistance phase change memory resistance drift thermionic emission

DOI 10.1021/acsnano.3c11019

PMID 38458609

发布时间 2024-03-24

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