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Lattice Plainification Leads to High Thermoelectric Performance of P-Type PbSe Crystals.

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第一作者： Shibo,Liu

第一单位： School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.

作者： Shibo,Liu ^[1] ; Yi,Wen ^[1] ; Shulin,Bai ^[1] ; Haonan,Shi ^[1] ; Yongxin,Qin ^[1] ; Bingchao,Qin ^[1] ; Dongrui,Liu ^[1] ; Qian,Cao ^[2] ; Xiang,Gao ^[3] ; Lizhong,Su ^[4] ; Cheng,Chang ^[1] ; Xiao,Zhang ^[5] ; Li-Dong,Zhao ^[6]

作者单位： School of Materials Science and Engineering, Beihang University, Beijing, 100191, China. ^[1] Huabei Cooling Device Co. LTD, Hebei, 065400, China. ^[2] Center for High-Pressure Science and Technology Advanced Research (HPSTAR), Beijing, 100094, China. ^[3] School of Materials Science and Engineering, Taiyuan University of Science and Technology, Taiyuan, 030024, China. ^[4] Research Institute for Frontier Science, Beihang University, Beijing, 100191, China. ^[5] School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.;Tianmushan Laboratory, Yuhang District, Hangzhou, 311115, China. ^[6]

关键词 carrier mobility lattice plainification p‐type PbSe thermoelectric devices

DOI 10.1002/adma.202401828

PMID 38466123

发布时间 2024-07-20

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