Synergistic Radiation Effects in PPD CMOS Image Sensors Induced by Neutron Displacement Damage and Gamma Ionization Damage.

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作者： Zu-Jun,Wang ^[1] ; Yuan-Yuan,Xue ^[2] ; Ning,Tang ^[1] ; Gang,Huang ^[2] ; Xu,Nie ^[2] ; Shan-Kun,Lai ^[2] ; Bao-Ping,He ^[2] ; Wu-Ying,Ma ^[1] ; Jiang-Kun,Sheng ^[1] ; Shi-Long,Gou ^[1]

作者单位： National Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China. ^[1] School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China. ^[2]

关键词 CMOS image sensor (CIS)dark signal dark signal non-uniformity (DSNU)displacement damage gamma ray neutron radiation synergistic effect total ionizing dose (TID)

DOI 10.3390/s24051441

PMID 38474978

发布时间 2024-03-15

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