Integration of Ultrathin Hafnium Oxide with a Clean van der Waals Interface for Two-Dimensional Sandwich Heterostructure Electronics.

导出 LinkOut

翻译打印收藏纠错

作者： Yumei,Jing ^[1] ; Xianfu,Dai ^[1] ; Junqiang,Yang ^[1] ; Xiaobin,Zhang ^[2] ; Zhongwang,Wang ^[1] ; Xiaochi,Liu ^[1] ; Huamin,Li ^[3] ; Yahua,Yuan ^[1] ; Xuefan,Zhou ^[4] ; Hang,Luo ^[4] ; Dou,Zhang ^[4] ; Jian,Sun ^[1]

作者单位： School of Physics, Central South University, No. 932 South Lushan Road, Changsha 410083, China. ^[1] Beijing Advanced Innovation Center for Materials Genome Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China. ^[2] Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States. ^[3] Powder Metallurgy Research Institute and State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China. ^[4]

关键词 2D transistors high-κ dielectrics selective oxidation van der Waals integration

DOI 10.1021/acs.nanolett.4c00117

PMID 38526847

发布时间 2024-04-03

翻译满意度评价：

准确一般字义偏差语意偏离译文作用小提交