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High-κ Dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low-Power Steep-Switching Computing Devices.

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第一作者： Taeho,Kang

第一单位： SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea.;Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, South Korea.

作者： Taeho,Kang ^[1] ; Joonho,Park ^[2] ; Hanggyo,Jung ^[3] ; Haeju,Choi ^[1] ; Sang-Min,Lee ^[1] ; Nayeong,Lee ^[1] ; Ryong-Gyu,Lee ^[2] ; Gahye,Kim ^[4] ; Seung-Hwan,Kim ^[5] ; Hyung-Jun,Kim ^[5] ; Cheol-Woong,Yang ^[4] ; Jongwook,Jeon ^[6] ; Yong-Hoon,Kim ^[2] ; Sungjoo,Lee ^[7]

作者单位： SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea.;Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, South Korea. ^[1] School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea. ^[2] Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea. ^[3] Department of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, 16419, South Korea. ^[4] Center for Spintronics, Korea Institute of Science and Technology/Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, South Korea. ^[5] School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, South Korea. ^[6] SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea.;Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, South Korea.;Department of Nano Engineering, Sungkyunkwan University, Suwon, 16419, South Korea. ^[7]

关键词 atomically sharp interface high‐κ gate stack native oxide steep‐switching computing van der waals material

DOI 10.1002/adma.202312747

PMID 38531112

发布时间 2024-06-26

基金项目

::National Research Foundation of Korea:: RS-2023-00281048/Korean government 2022R1A2C3003068)/Korean government

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