Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors.

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作者： Shimin,Ge ^[1] ; Juncheng,Xiao ^[1] ; Shan,Li ^[2] ; Dong,Yuan ^[2] ; Yuhua,Dong ^[2] ; Shengdong,Zhang ^[1]

作者单位： School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen 518055, China. ^[1] TCL China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen 518132, China. ^[2] School of Integrated Circuits, Peking University, Beijing 100871, China. ^[3]

关键词 a-IGZO TFTs back-channel damage device stability oxygen vacancy

DOI 10.3390/mi15030400

PMID 38542647

发布时间 2024-03-30

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2024年15卷3期

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Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors.

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Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors.

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