Controlling Interfacial Amidation Reaction Rate to Regulate Crystal Growth toward High-Performance FAPbBr<sub>3</sub>-Based Inverted Light-Emitting Diodes.

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作者： Qiaopeng,Cui ^[1] ; Dingshuo,Zhang ^[1] ; Yun,Gao ^[1] ; Chao,Fan ^[1] ; Qiuting,Cai ^[2] ; Hongjin,Li ^[1] ; Xiaohui,Wu ^[1] ; Meiyi,Zhu ^[1] ; Junjie,Si ^[1] ; Xingliang,Dai ^[2] ; Haiping,He ^[3] ; Zhizhen,Ye ^[1]

作者单位： School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China. ^[1] Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China. ^[2] College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, P. R. China. ^[3] Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi 030000, China. ^[4]

关键词 Crystallization FAPbBr3 Perovskite Interfacial Reaction Inverted Structure Light-Emitting Diodes

DOI 10.1021/acsnano.4c00639

PMID 38569090

发布时间 2024-04-16

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