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CMOS-Integrated Ternary Content Addressable Memory using Nanocavity CBRAMs for High Sensing Margin.

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第一作者： Gihwan,Hyun

第一单位： Department of Electronics and Information Convergence Engineering, College of Electronics and Information, Kyung Hee University, Yongin-si, Gyeonggi-do, 17104, Republic of Korea.;Department of Electronic Engineering, College of Electronics and Information, Kyung Hee University, Yongin-si, Gyeonggi-do, 17104, Republic of Korea.

作者： Gihwan,Hyun ^[1] ; Batyrbek,Alimkhanuly ^[1] ; Donguk,Seo ^[2] ; Minwoo,Lee ^[1] ; Junseong,Bae ^[1] ; Seunghyun,Lee ^[1] ; Shubham,Patil ^[1] ; Youngcheol,Hwang ^[1] ; Arman,Kadyrov ^[1] ; Hyungyu,Yoo ^[1] ; Anupom,Devnath ^[1] ; Yoonmyung,Lee ^[2] ; Seunghyun,Lee ^[1]

作者单位： Department of Electronics and Information Convergence Engineering, College of Electronics and Information, Kyung Hee University, Yongin-si, Gyeonggi-do, 17104, Republic of Korea.;Department of Electronic Engineering, College of Electronics and Information, Kyung Hee University, Yongin-si, Gyeonggi-do, 17104, Republic of Korea. ^[1] Department of Electrical and Computer Engineering, College of Information and Communication Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea. ^[2]

关键词 CMOS integration anodic aluminum oxide template conductive bridge random‐access memory memory sensing margin ternary content addressable memory

DOI 10.1002/smll.202310943

PMID 38607261

发布时间 2024-08-22

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