Magneto-transport in the monolayer MoS<sub>2</sub>material system for high-performance field-effect transistor applications.

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作者： Anup Kumar,Mandia ^[1] ; Rohit,Kumar ^[2] ; Seung-Cheol,Lee ^[3] ; Satadeep,Bhattacharjee ^[1] ; Bhaskaran,Muralidharan ^[2]

作者单位： Indo-Korea Science and Technology Center (IKST), Jakkur, Bengaluru 560065, India. ^[1] Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai-400076, India. ^[2] Electronic Materials Research Center, KIST, Seoul 136-791, Republic of Korea. ^[3] Centre of Excellence in Quantum Information, Computation, Science and Technology, Indian Institute of Technology Bombay, Powai, Mumbai-400076, India. ^[4]

关键词 Boltzmann transport theory MoS2 TMDCs magneto-transport two-dimensional material

DOI 10.1088/1361-6528/ad3fc2

PMID 38631306

发布时间 2024-05-10

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