Room‐Temperature Antisymmetric Magnetoresistance in van der Waals Ferromagnet Fe<sub>3</sub>GaTe<sub>2</sub> Nanosheets.

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作者： Guojing,Hu ^[1] ; Hui,Guo ^[1] ; Senhao,Lv ^[2] ; Linxuan,Li ^[1] ; Yunhao,Wang ^[2] ; Yechao,Han ^[2] ; Lulu,Pan ^[1] ; Yulan,Xie ^[2] ; Weiqi,Yu ^[1] ; Ke,Zhu ^[2] ; Qi,Qi ^[1] ; Guoyu,Xian ^[1] ; Shiyu,Zhu ^[1] ; Jinan,Shi ^[1] ; Lihong,Bao ^[2] ; Xiao,Lin ^[1] ; Wu,Zhou ^[2] ; Haitao,Yang ^[1] ; Hong-Jun,Gao ^[2]

作者单位： Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China. ^[1] School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China. ^[2] Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China. ^[3]

关键词 Fe3GaTe2 antisymmetric magnetoresistance planar symmetry breaking room‐temperature van der Waals ferromagnet

DOI 10.1002/adma.202403154

PMID 38631700

发布时间 2024-07-04

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