作者：
Hongze,Wang [1]
;
Junbo,Wang [1]
;
Qingyun,He [1]
;
Jingxi,Chang [1]
;
Shaoyu,Chen [1]
;
Chongyu,Zhong [1]
;
Mengyang,Wu [1]
;
Xiangru,Zhao [1]
;
Haoyu,Chen [1]
;
Qiushuang,Tian [1]
;
Mubai,Li [1]
;
Jingya,Lai [1]
;
Yingguo,Yang [2]
;
Renzhi,Li [1]
;
Bo,Wu [1]
;
Wei,Huang [3]
;
Tianshi,Qin [3]
;
Fangfang,Wang [1]
作者单位：
Institute of Advanced Materials (IAM) and Key Laboratory of Flexible Electronics (KLOFE), Nanjing Tech University, Jiangsu, 210009, China.
[1]
School of Microelectronics, Fudan University, Shanghai, 200433>, China.
[2]
School of Flexible Electronics (SoFE) & State Key Laboratory of Optoelectronic Materials and Technologies (OEMT), Sun Yat-sen University, Guangdong, 510275, China.
[3]
DOI
10.1002/anie.202404289
PMID
38712497
发布时间
2024-07-15
换一批
换一批
