Impact of Surface States in Graphene/<i>p</i>-Si Schottky Diodes.

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第一作者： Piera,Maccagnani

第一单位： Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e i Microsistemi, Via P. Gobetti 101, 40129 Bologna, Italy.

作者： Piera,Maccagnani ^[1] ; Marco,Pieruccini ^[2]

作者单位： Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e i Microsistemi, Via P. Gobetti 101, 40129 Bologna, Italy. ^[1] Department of Physics and Earth Sciences, University of Ferrara, Via Giuseppe Saragat 1/c, 44122 Ferrara, Italy. ^[2]

关键词 2D materials Fermi liquids charge transport diode parameter extraction graphene/silicon Schottky diode modeling surface state

DOI 10.3390/ma17091997

PMID 38730804

发布时间 2024-05-14

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