Low-Temperature Nanosecond Laser Process of HZO-IGZO FeFETs toward Monolithic 3D System on Chip Integration.

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作者： Dongsu,Kim ^[1] ; Heejae,Jeong ^[1] ; Goeun,Pyo ^[1] ; Su Jin,Heo ^[2] ; Seunghun,Baik ^[1] ; Seonhyoung,Kim ^[3] ; Hong Soo,Choi ^[3] ; Hyuk-Jun,Kwon ^[1] ; Jae Eun,Jang ^[1]

作者单位： Department of Electrical Engineering and Computer Science, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, South Korea. ^[1] Department of Electrical Engineering and Computer Science, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, South Korea.;Department of Engineering, Institute for Manufacturing, University of Cambridge, Cambridge, CB3 0FS, United Kingdom. ^[2] Department of Robotics and Mechatronics Engineering, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, South Korea. ^[3]

关键词 IGZO‐HZO FeFET emerging memory devices ferroelectric laser annealing low thermal budget monolithic 3D integration

DOI 10.1002/advs.202401250

PMID 38741378

发布时间 2024-07-26

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Advanced science (Weinheim, Baden-Wurttemberg, Germany)

2024年11卷28期

e2401250页

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Low-Temperature Nanosecond Laser Process of HZO-IGZO FeFETs toward Monolithic 3D System on Chip Integration.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)

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Advanced science (Weinheim, Baden-Wurttemberg, Germany)

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Low-Temperature Nanosecond Laser Process of HZO-IGZO FeFETs toward Monolithic 3D System on Chip Integration.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)

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Advanced science (Weinheim, Baden-Wurttemberg, Germany)

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