作者：
Lin,Huang [1]
;
Liyang,Liao [1]
;
Hongsong,Qiu [2]
;
Xianzhe,Chen [3]
;
Hua,Bai [4]
;
Lei,Han [1]
;
Yongjian,Zhou [1]
;
Yichen,Su [1]
;
Zhiyuan,Zhou [1]
;
Feng,Pan [1]
;
Biaobing,Jin [1]
;
Cheng,Song [5]
作者单位：
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, China.
[1]
Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan.
[2]
Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing, China.
[3]
Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
[4]
Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing, China. bbjin@nju.edu.cn.
[5]
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, China. songcheng@mail.tsinghua.edu.cn.
[6]
DOI
10.1038/s41467-024-48391-1
PMID
38769299
发布时间
2024-05-22
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