Toward Ideal Low-Frequency Noise in Monolayer CVD MoS<sub>2</sub> FETs: Influence of van der Waals Junctions and Sulfur Vacancy Management.
第一作者:
Wonjun,Shin
第一单位:
Inter-University Semiconductor Research Center, Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, Republic of Korea.;Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Gyeonggi-do, Suwon, 16419, Republic of Korea.
作者:
DOI
10.1002/advs.202307196
PMID
38773725
发布时间
2024-07-26
基金项目
RS-2023-00220471/National Research Foundation of Korea
::BK21 FOUR program::
- 浏览0
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
2024年11卷28期
e2307196页
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