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A Study on the Frequency-Domain Black-Box Modeling Method for the Nonlinear Behavioral Level Conduction Immunity of Integrated Circuits Based on X-Parameter Theory.

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第一作者： Xi,Chen

第一单位： School of Electronic and Information Engineering, Beihang University, Beijing 100191, China.

作者： Xi,Chen ^[1] ; Shuguo,Xie ^[1] ; Mengyuan,Wei ^[1] ; Yan,Yang ^[1]

作者单位： School of Electronic and Information Engineering, Beihang University, Beijing 100191, China. ^[1]

关键词 X-parameters direct power injection (DPI)electromagnetic compatibility (EMC) modeling immunity modeling integrated circuit (IC)models of integrated circuits for RF immunity behavioral simulation-conducted immunity modeling (ICIM-CI)

DOI 10.3390/mi15050658

PMID 38793231

发布时间 2024-05-27

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2024年15卷5期

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A Study on the Frequency-Domain Black-Box Modeling Method for the Nonlinear Behavioral Level Conduction Immunity of Integrated Circuits Based on X-Parameter Theory.

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A Study on the Frequency-Domain Black-Box Modeling Method for the Nonlinear Behavioral Level Conduction Immunity of Integrated Circuits Based on X-Parameter Theory.

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