Improved high voltage operation of amorphous In-Ga-Zn-O thin film transistor by carrier density enhancement.

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第一作者： Hyoungbeen,Ju

第一单位： Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Republic of Korea.

作者： Hyoungbeen,Ju ^[1] ; Jiyoung,Bang ^[1] ; Hyeonjeong,Sun ^[2] ; Yeonghun,Lee ^[1] ; Sangduk,Kim ^[1] ; Seungmin,Choi ^[2] ; Youngsoo,Noh ^[2] ; Hyo Won,Kim ^[1] ; Eunsuk,Choi ^[3] ; Jae Kyeong,Jeong ^[1] ; Seung-Beck,Lee ^[2]

作者单位： Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Republic of Korea. ^[1] Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea. ^[2] Information Display & Semiconductor Research Institute, Hanyang University, Seoul 04763, Republic of Korea. ^[3] Institute of Nano Science and Technology, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea. ^[4]

关键词 high voltage oxide semiconductor thin-film transistor

DOI 10.1088/1361-6528/ad50df

PMID 38806010

发布时间 2024-06-07

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