Effect of electrical stress on time dependent dielectric breakdown (TDDB) tolerate capability of HfO2-ZrO2 ferroelectric films with different thicknesses.

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第一作者： Yue,Peng

第一单位： Xidian University, Xi'an 710071, Xian, Shaanxi, 710071, CHINA.

作者： Yue,Peng ^[1] ; Zhe,Wang ^[2] ; Qiuxia,Wu ^[3] ; Shuo,Zhang ^[4] ; Wenxuan,Ma ^[5] ; Wenwu,Xiao ^[6] ; Chunfu,Zhang ^[7] ; Yue,Hao ^[8]

作者单位： Xidian University, Xi'an 710071, Xian, Shaanxi, 710071, CHINA. ^[1] Xidian University, Xidian university, Xian, 710126, CHINA. ^[2] Xidian University, No2 South street Taibai Road, Xian, 710126, CHINA. ^[3] Xidian University, No2 South street Taibai Road Xi'an, Xian, 710126, CHINA. ^[4] Xidian University, No 2 South Street, Taibai road, XI'an, Xian, 710126, CHINA. ^[5] Xi'an UniIC, Xi'an, Xi'an, 710071, CHINA. ^[6] School of Microelectronics Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, Xi'an, 710071, CHINA. ^[7] Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics, Xidian University, Xi'an 710071, Xian, 710126, CHINA. ^[8]

关键词 HZO TDDB ferroelectric oxygen vacancy thickness

DOI 10.1088/1361-6528/ad5687

PMID 38861971

发布时间 2024-06-11

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Effect of electrical stress on time dependent dielectric breakdown (TDDB) tolerate capability of HfO2-ZrO2 ferroelectric films with different thicknesses.

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Effect of electrical stress on time dependent dielectric breakdown (TDDB) tolerate capability of HfO2-ZrO2 ferroelectric films with different thicknesses.

Nanotechnology

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Nanotechnology

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