Reducing Off-State and Leakage Currents by Dielectric Permittivity-Graded Stacked Gate Oxides on Trigate FinFETs: A TCAD Study.

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第一作者： Alper,Ülkü

第一单位： Department of Material Science and Engineering, Gebze Technical University, Kocaeli 41400, Türkiye.

作者： Alper,Ülkü ^[1] ; Esin,Uçar ^[2] ; Ramis Berkay,Serin ^[1] ; Rifat,Kaçar ^[2] ; Murat,Artuç ^[1] ; Ebru,Menşur ^[2] ; Ahmet Yavuz,Oral ^[2]

作者单位： Department of Material Science and Engineering, Gebze Technical University, Kocaeli 41400, Türkiye. ^[1] Microelectronics, Guidance and Electro-Optics Business Sector, ASELSAN, Akyurt, Ankara 06750, Türkiye. ^[2]

关键词 Fin-Field Effect Transistors (FinFET)Maxwell–Garnett mixing formula Penn Model SILVACO ATLAS dielectric permittivity matching effective dielectric constant (κEFF)graded dielectric permittivity gate oxides grading profile κ-graded stacked gate oxides

DOI 10.3390/mi15060726

PMID 38930696

发布时间 2024-06-29

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2024年15卷6期

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Reducing Off-State and Leakage Currents by Dielectric Permittivity-Graded Stacked Gate Oxides on Trigate FinFETs: A TCAD Study.

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Reducing Off-State and Leakage Currents by Dielectric Permittivity-Graded Stacked Gate Oxides on Trigate FinFETs: A TCAD Study.

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