作者：
Jiazheng,Hu [1]
;
Jing,Li [2]
;
Guochao,Lu [1]
;
Dingshuo,Zhang [1]
;
Qiuting,Cai [1]
;
Xinyang,Wang [1]
;
Zhishan,Fang [1]
;
Haoran,Zhang [1]
;
Zaishang,Long [1]
;
Jun,Pan [3]
;
Xingliang,Dai [4]
;
Zhizhen,Ye [4]
;
Haiping,He [4]
作者单位：
School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China.
[1]
School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China.;College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou, 310014, China.
[2]
College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou, 310014, China.
[3]
School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, 310027, China.;Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, 325006, China.;Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shanxi, 030000, China.
[4]
DOI
10.1002/smll.202402786
PMID
38966898
发布时间
2024-11-01
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