A first-principles prediction of novel Janus ZrGeZ<sub>3</sub>H (Z = N, P, and As) monolayers: Raman active modes, piezoelectric responses, electronic properties, and carrier mobility.

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第一作者： Tuan V,Vu

第一单位： Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University Ho Chi Minh City Vietnam tuan.vu@vlu.edu.vn.

作者： Tuan V,Vu ^[1] ; Vo T T,Vi ^[2] ; Nguyen T,Hiep ^[3] ; Khanh V,Hoang ^[4] ; A I,Kartamyshev ^[5] ; Huynh V,Phuc ^[6] ; Nguyen N,Hieu ^[1]

作者单位： Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University Ho Chi Minh City Vietnam tuan.vu@vlu.edu.vn. ^[1] Faculty of Mechanical - Electrical and Computer Engineering, School of Technology, Van Lang University Ho Chi Minh City Vietnam. ^[2] Faculty of Basic Sciences, University of Medicine and Pharmacy, Hue University Hue 530000 Vietnam. ^[3] Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam nguyenthihiep2@duytan.edu.vn. ^[4] Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam. ^[5] Phenikaa Institute for Advanced Study (PIAS), Phenikaa University Hanoi 12116 Vietnam. ^[6] Division of Physics, School of Education, Dong Thap University Cao Lanh 870000 Vietnam hvphuc@dthu.edu.vn. ^[7]

DOI 10.1039/d4ra04107k

PMID 38993506

发布时间 2024-07-14

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2024年14卷30期

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A first-principles prediction of novel Janus ZrGeZ<sub>3</sub>H (Z = N, P, and As) monolayers: Raman active modes, piezoelectric responses, electronic properties, and carrier mobility.

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A first-principles prediction of novel Janus ZrGeZ<sub>3</sub>H (Z = N, P, and As) monolayers: Raman active modes, piezoelectric responses, electronic properties, and carrier mobility.

RSC advances

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RSC advances

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