作者：
Yun,Gao [1]
;
Qiuting,Cai [2]
;
Yifan,He [3]
;
Dingshuo,Zhang [1]
;
Qingli,Cao [1]
;
Meiyi,Zhu [1]
;
Zichao,Ma [1]
;
Baodan,Zhao [4]
;
Haiping,He [5]
;
Dawei,Di [4]
;
Zhizhen,Ye [5]
;
Xingliang,Dai [5]
作者单位：
School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China.;Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China.
[1]
School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China.;State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310027, China.
[2]
Wenzhou XINXINTAIJING Tech. Co. Ltd., Wenzhou 325006, China.
[3]
State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310027, China.
[4]
School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China.;Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China.;Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030002, China.
[5]
DOI
10.1126/sciadv.ado5645
PMID
39018409
发布时间
2024-07-19
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