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Hole-Carrier-Dominant Transport in 2D Single-Crystal Copper.

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第一作者: Jong Mok,Ok
第一单位: Department of Physics, Pusan National University, Busan, 46241, Republic of Korea.
作者单位: Department of Physics, Pusan National University, Busan, 46241, Republic of Korea. [1] Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea. [2] Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea. [3] Department of Physics and Institute of Quantum Convergence Technology, Kangwon National University, Gangwon, 24341, Republic of Korea.;Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA. [4] Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA. [5] Crystal Bank Research Institute, Pusan National University, Busan, 46241, Republic of Korea. [6] Department of Physics and Astronomy, Mississippi State University, Mississippi State, MS, 39762, USA. [7] Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.;Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea. [8] Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea. [9] Copper Innovative Technology (CIT) Co., Busan, 46285, Republic of Korea. [10] Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.;Gordon Center for Medical Imaging, Department of Radiology, Massachusetts General Hospital and Harvard Medical School, Boston, MA, 02114, USA.;Department of Optics and Mechatronics Engineering, Engineering Research Center for Color-Modulated Extra-Sensory Perception Technology, Pusan National University, Busan, 46241, Republic of Korea. [11]
DOI 10.1002/adma.202403783
PMID 39023001
发布时间 2024-09-18
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