Positive Bias Temperature Instability in SiC-Based Power MOSFETs.

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第一作者： Vladislav,Volosov

第一单位： Advanced Research Center on Electronic System, Department of Electrical, Electronic and Information Engineering, University of Bologna, 47522 Cesena, Italy.

作者： Vladislav,Volosov ^[1] ; Santina,Bevilacqua ^[2] ; Laura,Anoldo ^[2] ; Giuseppe,Tosto ^[2] ; Enzo,Fontana ^[2] ; Alfio-Lip,Russo ^[2] ; Claudio,Fiegna ^[1] ; Enrico,Sangiorgi ^[1] ; Andrea Natale,Tallarico ^[1]

作者单位： Advanced Research Center on Electronic System, Department of Electrical, Electronic and Information Engineering, University of Bologna, 47522 Cesena, Italy. ^[1] STMicroelectronics, SRL, Stradale Primosole 50, 95121 Catania, Italy. ^[2]

关键词 VTH characterization defects reliability silicon carbide MOSFETs threshold voltage instability trapping/de-trapping mechanisms

DOI 10.3390/mi15070872

PMID 39064382

发布时间 2024-07-29

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2024年15卷7期

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Positive Bias Temperature Instability in SiC-Based Power MOSFETs.

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Positive Bias Temperature Instability in SiC-Based Power MOSFETs.

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