All-2D-Materials Subthreshold-Free Field-Effect Transistor with Near-Ideal Switching Slope.

导出 LinkOut

翻译打印收藏纠错

第一作者： Jiayang,Hu

第一单位： College of Integrated Circuits, Zhejiang University, Hangzhou, Zhejiang 311200, China.;ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, China.

作者： Jiayang,Hu ^[1] ; Hanxi,Li ^[1] ; Anzhe,Chen ^[1] ; Yishu,Zhang ^[1] ; Hailiang,Wang ^[1] ; Yu,Fu ^[2] ; Xin,Zhou ^[3] ; Kian Ping,Loh ^[3] ; Yu,Kang ^[1] ; Jian,Chai ^[1] ; Chenhao,Wang ^[4] ; Jiachao,Zhou ^[1] ; Jialei,Miao ^[1] ; Yuda,Zhao ^[1] ; Shuai,Zhong ^[5] ; Rong,Zhao ^[5] ; Kaihui,Liu ^[2] ; Yang,Xu ^[1] ; Bin,Yu ^[1]

作者单位： College of Integrated Circuits, Zhejiang University, Hangzhou, Zhejiang 311200, China.;ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, China. ^[1] State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China. ^[2] Department of Chemistry, National University of Singapore, Singapore 117543, Singapore. ^[3] School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China. ^[4] Department of Precision Instruments, Tsinghua University, Beijing 100084, China. ^[5]

关键词 2D materials Boltzmann limit low-power CMOS memristor steep-slope transistor van der Waals heterostructure

DOI 10.1021/acsnano.4c03856

PMID 39073870

发布时间 2024-07-29

翻译满意度评价：

准确一般字义偏差语意偏离译文作用小提交

浏览0

ACS nano

相似文献

中文期刊
外文期刊
学位论文
会议论文

检索历史清除

All-2D-Materials Subthreshold-Free Field-Effect Transistor with Near-Ideal Switching Slope.

ACS nano

相似文献

ACS nano

相关期刊

参考文献：
指定格式：	NoteExpress EndNote RefWorks NoteFirst

检索历史 清除

All-2D-Materials Subthreshold-Free Field-Effect Transistor with Near-Ideal Switching Slope.

ACS nano

相似文献

ACS nano

相关期刊

检索历史清除