作者：
Guochao,Lu [1]
;
Xinyang,Wang [1]
;
Xinyi,Jiang [1]
;
Jing,Li [2]
;
Meiyi,Zhu [3]
;
Zichao,Ma [1]
;
Dingshuo,Zhang [1]
;
Yun,Gao [1]
;
Jun,Pan [4]
;
Xingliang,Dai [5]
;
Zhizhen,Ye [5]
;
Haiping,He [5]
作者单位：
School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, P. R. China.
[1]
School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, P. R. China.;College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, P. R. China.
[2]
School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, P. R. China.;Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, P. R. China.
[3]
College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, P. R. China.
[4]
School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, P. R. China.;Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, P. R. China.;Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030000, Shanxi, P. R. China.;Wenzhou XINXINTAIJING Tech. Co. Ltd., Wenzhou 325006, P. R. China.
[5]
DOI
10.1021/acsnano.4c06877
PMID
39145749
发布时间
2024-08-27
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