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Bi-Directional and Operand-Controllable In-Memory Computing for Boolean Logic and Search Operations with Row and Column Directional SRAM (RC-SRAM).

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第一作者： Han,Xiao

第一单位： Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200031, China.;University of Chinese Academy of Sciences, Beijing 100049, China.

作者： Han,Xiao ^[1] ; Ruiyong,Zhao ^[1] ; Yulan,Liu ^[1] ; Yuanzhen,Liu ^[1] ; Jing,Chen ^[2]

作者单位： Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200031, China.;University of Chinese Academy of Sciences, Beijing 100049, China. ^[1] Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200031, China. ^[2]

关键词 Boolean logic operation SRAM content-addressable memory in-memory computing

DOI 10.3390/mi15081056

PMID 39203707

发布时间 2024-09-01

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Bi-Directional and Operand-Controllable In-Memory Computing for Boolean Logic and Search Operations with Row and Column Directional SRAM (RC-SRAM).

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Bi-Directional and Operand-Controllable In-Memory Computing for Boolean Logic and Search Operations with Row and Column Directional SRAM (RC-SRAM).

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