Engineering Carrier Density and Effective Mass of Plasmonic TiN Films by Tailoring Nitrogen Vacancies.
第一作者:
Shunda,Zhang
第一单位:
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
作者:
DOI
10.1021/acs.nanolett.4c03534
PMID
39315654
发布时间
2024-10-09
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Nano letters
12568-12575页
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