Ferroelectricity in Ultrathin HfO<sub>2</sub>-Based Films by Nanosecond Laser Annealing.

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作者： Robin,Athle ^[1] ; Megan O,Hill ^[2] ; Austin,Irish ^[3] ; Huaiyu,Chen ^[3] ; Rainer,Timm ^[3] ; Elias,Kristensson ^[4] ; Jesper,Wallentin ^[3] ; Mattias,Borg ^[1]

作者单位： Electrical and Information Technology, Lund University, Box 118, Lund 22 100, Sweden.;NanoLund, Lund University, Box 118, Lund 22 100, Sweden. ^[1] NanoLund, Lund University, Box 118, Lund 22 100, Sweden.;Division of Synchrotron Radiation Research, Lund University, Box 118, Lund 22 100, Sweden.;MAX IV Laboratory, Lund University, Box 118, Lund 22 100, Sweden. ^[2] NanoLund, Lund University, Box 118, Lund 22 100, Sweden.;Division of Synchrotron Radiation Research, Lund University, Box 118, Lund 22 100, Sweden. ^[3] Division of Combustion Physics, Lund University, Box 118, Lund 22 100, Sweden.;Lund Laser Center, Lund University, Box 118, Lund 22 100, Sweden. ^[4]

关键词 BEOL compatibility FeRAM ferroelectric hafnium oxide thin films

DOI 10.1021/acsami.4c10002

PMID 39359120

发布时间 2024-10-23

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ACS applied materials & interfaces

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Ferroelectricity in Ultrathin HfO<sub>2</sub>-Based Films by Nanosecond Laser Annealing.

ACS applied materials & interfaces

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Ferroelectricity in Ultrathin HfO<sub>2</sub>-Based Films by Nanosecond Laser Annealing.

ACS applied materials & interfaces

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ACS applied materials & interfaces

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