Scale-Dependent Growth Modes of Selective Area Grown III-V Nanowires.

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第一作者： Daria V,Beznasyuk

第一单位： Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.

作者： Daria V,Beznasyuk ^[1] ; Sara,Martí-Sánchez ^[2] ; Gunjan,Nagda ^[3] ; Damon James,Carrad ^[1] ; Jordi,Arbiol ^[4] ; Thomas Sand,Jespersen ^[1]

作者单位： Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark. ^[1] Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Bellaterra, Barcelona, Catalonia, Spain. ^[2] Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark. ^[3] Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Bellaterra, Barcelona, Catalonia, Spain.;ICREA, Passeig de Lluís Companys 23, 08010 Barcelona, Catalonia, Spain. ^[4]

关键词 GaAs(Sb)InGaAs diffusion length growth modes molecular beam epitaxy selective area growth

DOI 10.1021/acs.nanolett.4c03283

PMID 39485017

发布时间 2024-11-13

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