Enhancing Uniformity, Read Voltage Margin, and Retention in Three-Dimensional and Self-Rectifying Vertical Pt/Ta2O5/Al2O3/TiN Memristors.

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作者： Tae Won,Park ^[1] ; Jiwon,Moon ^[1] ; Dong Hoon,Shin ^[1] ; Hae Jin,Kim ^[2] ; Seung Soo,Kim ^[1] ; Jea Min,Cho ^[1] ; Hyungjun,Park ^[1] ; Kyung Seok,Woo ^[1] ; Dong Yun,Kim ^[1] ; Sunwoo,Cheong ^[1] ; Haewon,Song ^[1] ; Jong Hoon,Shin ^[1] ; Soo Hyung,Lee ^[1] ; Néstor,Ghenzi ^[3] ; Cheol Seong,Hwang ^[1]

作者单位： Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea. ^[1] Department of Materials Science and Engineering, Myongji University, Yongin 17058, Korea. ^[2] Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea.;Universidad de Avellaneda UNDAV and Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Buenos Aires B1870, Argentina. ^[3]

关键词 V-RRAM charge-trap memristor retention self-rectifying uniformity

DOI 10.1021/acsami.4c15598

PMID 39531380

发布时间 2024-11-28

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