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Wafer-Scale Growth of Ultrauniform 2D PtSe<sub>2</sub> Films with Spatial and Thickness Control through Multi-step Metal Conversion.

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第一作者： Minseung,Gyeon

第一单位： Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.

作者： Minseung,Gyeon ^[1] ; Jae Eun,Seo ^[2] ; Saeyoung,Oh ^[3] ; Gichang,Noh ^[1] ; Changwook,Lee ^[2] ; Minhyuk,Choi ^[4] ; Seongdae,Kwon ^[1] ; Tae Soo,Kim ^[1] ; Hu Young,Jeong ^[5] ; Seungwoo,Song ^[6] ; Jiwon,Chang ^[2] ; Kibum,Kang ^[7]

作者单位： Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea. ^[1] Department of System Semiconductor Engineering and Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea. ^[2] Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea. ^[3] Strategic Technology Research Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea.;Department of Physics and Research Institute for Convergence of Basic Sciences, Hanyang University (HYU), Seoul 04763, Republic of Korea. ^[4] Graduate School of Semiconductor Materials and Device Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea. ^[5] Strategic Technology Research Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea. ^[6] Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.;Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea. ^[7]

关键词 PtSe2 high uniformity metal conversion p-type semiconductor semimetal thickness-controlled wafer-scale

DOI 10.1021/acsnano.4c08160

PMID 39622050

发布时间 2024-12-17

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