Selectively Self-Aligned Sol-Gel Copper Oxide for Large-Area Multi-Valued Logic Devices.

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作者： Seokhyeon,Baek ^[1] ; Wonsik,Kim ^[2] ; Won-June,Lee ^[3] ; Jun-Gyu,Choi ^[2] ; Sungjun,Park ^[4]

作者单位： Department of Intelligence Semiconductor and Engineering, Ajou University, Suwon, Republic of Korea. ^[1] Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, Republic of Korea. ^[2] Department of Chemistry, Purdue University, West Lafayette, Indiana, 47907, USA. ^[3] Department of Intelligence Semiconductor and Engineering, Ajou University, Suwon, Republic of Korea.;Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, Republic of Korea. ^[4]

关键词 direct patterning multi‐valued logic device oxide heterojunction transistor self‐assembled monolayer sol‐gel metal oxide transistor

DOI 10.1002/smll.202407497

PMID 39665366

发布时间 2024-12-12

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Selectively Self-Aligned Sol-Gel Copper Oxide for Large-Area Multi-Valued Logic Devices.

Small (Weinheim an der Bergstrasse, Germany)

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Small (Weinheim an der Bergstrasse, Germany)

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Selectively Self-Aligned Sol-Gel Copper Oxide for Large-Area Multi-Valued Logic Devices.

Small (Weinheim an der Bergstrasse, Germany)

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