Performance Enhancement of Carbon Nanotube Network Transistors via SbI<sub>3</sub> Inner-Doping in Selected Regions.

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第一作者： Qing,Guo

第一单位： Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.

作者： Qing,Guo ^[1] ; Xiujun,Wang ^[1] ; Pin,Zhao ^[1] ; Zhen,Zhang ^[1] ; Lin,Geng ^[1] ; Ye,Liu ^[1] ; Yu,Teng ^[1] ; Yunlei,Zhong ^[1] ; Lixing,Kang ^[1]

作者单位： Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China. ^[1]

关键词 contact resistance encapsulation field effect transistors semiconducting single‐wall carbon nanotubes semiconducting‐metallic transition

DOI 10.1002/adma.202415442

PMID 39703051

发布时间 2024-12-20

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Performance Enhancement of Carbon Nanotube Network Transistors via SbI<sub>3</sub> Inner-Doping in Selected Regions.

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Performance Enhancement of Carbon Nanotube Network Transistors via SbI<sub>3</sub> Inner-Doping in Selected Regions.

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