作者：
Lin,Huang [1]
;
Da,Tian [2]
;
Liyang,Liao [3]
;
Hongsong,Qiu [4]
;
Hua,Bai [5]
;
Qian,Wang [5]
;
Feng,Pan [5]
;
Caihong,Zhang [2]
;
Biaobing,Jin [2]
;
Cheng,Song [5]
作者单位：
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.;Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei, Anhui, 230601, China.
[1]
Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, China.
[2]
Institute for Solid State Physics, University of Tokyo, Kashiwa, 277-8581, Japan.
[3]
State Key Laboratory of Spintronics Devices and Technologies, School of Integrated Circuits, Nanjing University, Suzhou, 210033, China.
[4]
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
[5]
DOI
10.1002/adma.202402063
PMID
39707662
发布时间
2025-02-12
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