Pre-Melting-Assisted Impurity Control of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals in Edge-Defined Film-Fed Growth.

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第一作者： A-Ran,Shin

第一单位： Semiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of Korea.;School of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of Korea.

作者： A-Ran,Shin ^[1] ; Tae-Hun,Gu ^[2] ; Yun-Ji,Shin ^[3] ; Seong-Min,Jeong ^[3] ; Heesoo,Lee ^[4] ; Si-Young,Bae ^[2]

作者单位： Semiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of Korea.;School of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of Korea. ^[1] Division of Nanotechnology and Semiconductor Engineering, Pukyong National University, Busan 49315, Republic of Korea. ^[2] Semiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of Korea. ^[3] School of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of Korea. ^[4]

关键词 EFG gallium oxide impurity pre-melting single crystal

DOI 10.3390/nano15010007

PMID 39791767

发布时间 2025-01-12

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Nanomaterials (Basel, Switzerland)

2024年15卷1期

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Pre-Melting-Assisted Impurity Control of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals in Edge-Defined Film-Fed Growth.

Nanomaterials (Basel, Switzerland)

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Pre-Melting-Assisted Impurity Control of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals in Edge-Defined Film-Fed Growth.

Nanomaterials (Basel, Switzerland)

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Nanomaterials (Basel, Switzerland)

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