Low-Frequency Resistance Noise in Near-Magic-Angle Twisted Bilayer Graphene.

导出 LinkOut

翻译打印收藏纠错

作者： Pritam,Pal ^[1] ; Saisab,Bhowmik ^[2] ; Aparna,Parappurath ^[1] ; Saloni,Kakkar ^[1] ; Kenji,Watanabe ^[3] ; Takashi,Taniguchi ^[4] ; Arindam,Ghosh ^[5]

作者单位： Department of Physics, Indian Institute of Science, Bangalore 560012, India. ^[1] Instrumentation and applied physics, Indian Institute of Science, Bangalore 560012, India. ^[2] Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan. ^[3] Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan. ^[4] Department of Physics, Indian Institute of Science, Bangalore 560012, India.;Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012, India. ^[5]

关键词 1/f noise Lifshitz phase transition charge trapping-detrapping defects random telegraphic signal transition metal dichalcogenide twisted bilayer graphene

DOI 10.1021/acsnano.4c11141

PMID 39818764

发布时间 2025-01-17

翻译满意度评价：

准确一般字义偏差语意偏离译文作用小提交

浏览0

ACS nano

相似文献

中文期刊
外文期刊
学位论文
会议论文

检索历史清除

Low-Frequency Resistance Noise in Near-Magic-Angle Twisted Bilayer Graphene.

ACS nano

相似文献

ACS nano

相关期刊

参考文献：
指定格式：	NoteExpress EndNote RefWorks NoteFirst

检索历史 清除

Low-Frequency Resistance Noise in Near-Magic-Angle Twisted Bilayer Graphene.

ACS nano

相似文献

ACS nano

相关期刊

检索历史清除