Oxygen Incorporation as a Route to Nondegenerate Zinc Nitride Semiconductor Thin Films.

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作者： Elise,Sirotti ^[1] ; Bianca,Scaparra ^[2] ; Stefan,Böhm ^[1] ; Florian,Pantle ^[1] ; Laura I,Wagner ^[1] ; Felix,Rauh ^[1] ; Frans,Munnik ^[3] ; Chang-Ming,Jiang ^[1] ; Matthias,Kuhl ^[4] ; Kai,Müller ^[2] ; Johanna,Eichhorn ^[4] ; Verena,Streibel ^[1] ; Ian D,Sharp ^[1]

作者单位： Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.;Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany. ^[1] Walter Schottky Institute, Technical University of Munich, Garching 85748, Germany.;TUM School of Computation, Information and Technology, and MCQST, Technical University of Munich, Garching 85748, Germany. ^[2] Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany. ^[3] Physics Department, TUM School of Natural Sciences, Technical University of Munich, Garching 85748, Germany. ^[4]

关键词 Hall effect defect properties electronic properties molecular beam epitaxy zinc nitride

DOI 10.1021/acsami.4c16921

PMID 39871808

发布时间 2025-02-10

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