Volatile Resistive Switching and Short-Term Synaptic Plasticity in a Ferroelectric-Modulated SrFeO<sub><i>x</i></sub> Memristor.

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作者： Wenjie,Hu ^[1] ; Zhen,Fan ^[1] ; Linyuan,Mo ^[1] ; Haipeng,Lin ^[1] ; Meixia,Li ^[1] ; Wenjie,Li ^[1] ; Jiali,Ou ^[1] ; Ruiqiang,Tao ^[1] ; Guo,Tian ^[1] ; Minghui,Qin ^[1] ; Min,Zeng ^[1] ; Xubing,Lu ^[1] ; Guofu,Zhou ^[2] ; Xingsen,Gao ^[1] ; Jun-Ming,Liu ^[3]

作者单位： Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China. ^[1] National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, China. ^[2] Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.;Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China. ^[3]

关键词 artificial synapses conductive filaments ferroelectric polarization memristors short-term plasticity volatile resistive switching

DOI 10.1021/acsami.4c19627

PMID 39882776

发布时间 2025-02-13

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