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Van der Waals Antiferroelectric CuCrP2S6-Based Artificial Synapse for High-Precision Neuromorphic Computation.

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第一作者： Zhipeng,Yu

第一单位： Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.

作者： Zhipeng,Yu ^[1] ; Qinan,Wang ^[2] ; Tianle,Zeng ^[3] ; Kun,Ye ^[4] ; Houjian,Zhou ^[5] ; Zishuo,Han ^[1] ; Yuxuan,Zeng ^[1] ; Bin,Fang ^[1] ; Weiming,Lv ^[1] ; Lin,Geng ^[1] ; Chun,Zhao ^[6] ; Zhongyuan,Liu ^[4] ; Zhongming,Zeng ^[1]

作者单位： Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China. ^[1] Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.;School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, 215123, China. ^[2] Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.;Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, 066004, China. ^[3] Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, 066004, China. ^[4] Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, 066004, China.;China Nonferrous Metals Innovation Institute (Tianjin) Co., Ltd., Tianjin, 300393, China. ^[5] School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, 215123, China. ^[6]

关键词 antiferroelectric field‐effect transisstor artificial synapse charge trapping dynamics ferroelectric polarization neucromorphic computation

DOI 10.1002/smll.202502676

PMID 40351061

发布时间 2025-05-12

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