第一单位：
School of Physics, Zhejiang University of Technology, Hangzhou, 310023, PR China.
作者：
Beijia,Ji [1]
;
Zerui,Liu [2]
;
Zhekai,Lv [1]
;
Qihan,Yang [1]
;
Jingyi,Sun [1]
;
Guangxu,Su [1]
;
Yuxuan,Xia [1]
;
Xinxin,Yan [1]
;
Junzheng,Hu [3]
;
Pan,Hu [2]
;
Wanwan,Yi [4]
;
Chengyou,Jia [5]
;
Jiangbin,Wu [6]
;
Peng,Zhan [7]
;
Pingheng,Tan [8]
;
Wei,Wu [9]
;
Fanxin,Liu [10]
作者单位：
School of Physics, Zhejiang University of Technology, Hangzhou, 310023, PR China.
[1]
Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, United States of America.
[2]
School of Physics, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, PR China.
[3]
Department of Nuclear Medicine, Shanghai Tenth People's Hospital, Tongji University, Shanghai, 200072, PR China.
[4]
Department of Nuclear Medicine, Shanghai Tenth People's Hospital, Tongji University, Shanghai, 200072, PR China. Electronic address: jiachengyou@tongji.edu.cn.
[5]
State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, PR China. Electronic address: jbwu@semi.ac.cn.
[6]
School of Physics, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, PR China. Electronic address: zhanpeng@nju.edu.cn.
[7]
State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, PR China.
[8]
Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, United States of America. Electronic address: wu.w@usc.edu.
[9]
School of Physics, Zhejiang University of Technology, Hangzhou, 310023, PR China. Electronic address: liufanxin@zjut.edu.cn.
[10]
DOI
10.1016/j.bios.2025.117583
PMID
40383027
发布时间
2025-05-18
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